Channel length dependence of field-effect mobility of c-axis-aligned crystalline In–Ga–Zn–O field-effect transistors

摘要: Field-effect transistors (FETs) with c-axis-aligned crystalline In–Ga–Zn–O (CAAC-IGZO) active layers have extremely low off-state leakage current. Exploiting this feature, we investigated the application of CAAC-IGZO FETs to LSI memories. A high on-state current is required for high-speed operation these The field-effect mobility μFE a FET relatively compared electron single-crystal Si (sc-Si). In study, measured and calculated channel length L dependence sc-Si FETs. For FETs, remains almost constant, particularly when longer than 0.3 µm, whereas that decreases markedly as shortens. Thus, difference between both types reduced by miniaturization. This in behavior attributed different susceptibilities electrons phonon scattering. On basis result expect memories power consumption.