Deposition of c-Axis Aligned Crystalline InGaZnO by Mist Atmospheric Pressure Chemical Vapor Deposition for Thin-Film Transistor Applications

作者: Han-Yin Liu , Hao-Chun Hung , Wei-Ting Chen

DOI: 10.1109/TED.2020.3016633

关键词: Thin-film transistorAnalytical chemistryIndium tin oxideAmorphous solidThreshold voltageX-ray photoelectron spectroscopyBand gapSputteringAnnealing (metallurgy)Materials science

摘要: … Abstract—This study uses mist atmospheric pressure chemical vapor deposition with … TFT. The threshold voltage of the present CAAC-InGaZnO TFT changes −0.4 V when the TFT …

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