Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode
作者： Hee Sung Lee , Kwang H. Lee , Youn-Gyoung Chang , Syed Raza Ali Raza , Seongil Im
DOI: 10.1063/1.3598396
关键词:
摘要: Photoinverter and electrical-inverter applications of amorphous GaSnZnO thin-film transistors (GTZO-TFTs) with Al2O3 dielectrics were studied. The inverters composed two serially connected top-gate GTZO-TFTs different gate electrodes: semitransparent conducting NiOx opaque Al. Since the electrodes have so work functions as to properly arrange respective threshold voltages driver load TFTs, our inverter exhibited a desirable voltage transfer characteristics gain over 25 for electrical gating. A dynamic photogating was demonstrated an output photogain ∼2 V we applied blue illumination onto gate, through which photons are transmitted excite trapped electrons at dielectric/GTZO channel interface.
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