Transparent thin-film transistors with pentacene channel, AlOx gate, and NiOx electrodes

摘要: We report on the fabrication of pentacene-based transparent thin-film transistors (TTFT) that consist NiOx, AlOx, and indium-tin-oxide (ITO) for source-drain (S/D) electrode, gate dielectric, respectively. The NiOx S/D electrodes which work function is well matched to pentacene were deposited a 50-nm-thick channel by thermal evaporation NiO powder showed moderately low but still effective transmittance ∼25% in visible range along with good sheet resistance ∼60Ω∕◻. maximum saturation current our TTFT was about 15μA at bias −40V showing high field effect mobility 0.9cm2∕Vs dark, on/off ratio 5×105. It concluded jointly adopting electrode AlOx dielectric realizes high-quality TTFT.