Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
作者： Satoshi Masuda , Ken Kitamura , Yoshihiro Okumura , Shigehiro Miyatake , Hitoshi Tabata
DOI: 10.1063/1.1534627
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摘要: Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO–TFT) have been constructed. The ZnO layers were deposited using pulsed laser deposition at 450 C at …
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