Electrical and structural properties of Aligned Aluminum-doped zinc oxide nanorod arrays via a novel sonicated sol-gel immersion

摘要: Aligned Aluminum (Al)-doped zinc oxide (ZnO) nanorod arrays were prepared on seeded catalyst-coated glass substrates using a novel technique of sonicated sol-gel immersion method at different annealing temperatures. The diameter sizes synthesized hexagonal-shaped nanorods are found to be in the range between 50 nm 150 nm. treatment up 500 °C did not give any significance effects morphology as observed by field emission scanning electron microscopy (FESEM). micro-Raman spectra reveal that crystallinity improved higher temperature shown E 2 (high) peak intensity enhancement. This result was supported XRD where for annealed is than as-grown nanorods. Al-doped ZnO grew preferentially along (002) plane or c-axis, indicating high quality crystal. Al forms Ohmic contacts with through linear current-voltage (I-V) characteristic. conductivity increased temperatures maximum ∼1.72 × 10−2 Scm−1.