Nonvolatile storage device and its manufacture
作者： Eiji Uchida , 英次 内田
DOI:
关键词: Voltage 、 Electron 、 Oxide 、 Electrode 、 Negative voltage 、 Materials science 、 Electric field 、 Substrate (electronics) 、 Layer (electronics) 、 Optoelectronics
摘要: PROBLEM TO BE SOLVED: To provide a nonvolatile storage device, to which the number of rewriting times is not limited by deterioration tunnel oxide film. SOLUTION: A device constituted laminating control gate electrode 16 upon layer, formed on semiconductor substrate 10 having source region 11 and area 12 consists film 13, floating 14, charge transfer layer 20 an interlayer insulating 15, with being made material lower barrier height (electrons are discharged low electric field) than constituting 15 has. At erasing, electrons stored in 14 side impressing positive voltage negative 10. COPYRIGHT: (C)1999,JPO
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