Method for fabricating single electron transistor
作者： Byung Gook Park , Dae Hwan Kim , None
DOI:
关键词: Perpendicular 、 Gate oxide 、 Impurity 、 Quantum dot 、 Impurity ions 、 Materials science 、 Optoelectronics 、 Coulomb blockade 、 Fabrication 、 Groove (music)
摘要: A fabrication method provides a single electron transistor with reduced quantum dot size. The includes the steps of forming first gate insulating film on semiconductor substrate, implanting impurity ions into source/drain regions substrate to form regions, lower over channel region between second and film, third selectively removing portion in direction perpendicular define groove an upper film.
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