Method for fabricating a self-aligned multi-level interconnect
作者： Sheng T. Hsu , Robert G. Pollachek
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摘要: A self-aligned multi-level interconnect structure and a method for fabricating the same are disclosed. The is fabricated by steps of: (1) forming first plurality of spaced-apart insulative layers [231-233], where includes top layer [233]; (2) second conductors [221,222] positioning them interdigitally between layers; (3) defining hole [233h] extending through (4) using to define succession subsequent holes [222h,232h,22ih,231h] underlying layers, each successive being continuous with one above it; (5) through-conductor [223] holes. employed in multi-layer SRAM cell.
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