Dielectric properties of polyoxides for EEPROM
作者： G. Fernholz , H.-Th. Benz
DOI: 10.1016/0026-2692(93)90050-O
关键词: Composite material 、 EEPROM 、 Phosphorus concentration 、 Surface roughness 、 Non-volatile memory 、 Electrical engineering 、 Rapid thermal annealing 、 Materials science 、 Leakage (electronics) 、 Tetrachloroethane 、 Dielectric
摘要: Abstract Polyoxides for nonvolatile memories have been grown in a tetrachloroethane atmosphere at temperatures the range 900–1000°C, and subsequently electrically characterized. A comparison between poly-doping by POCl 3 phosphorus implantation is made. Implant anneals are performed rapid thermal annealing (RTA) or furnace process 900°C 1000°C. The effect of polydeposition temperature concentration on polyoxide quality was investigated. Breakdown fields increase with increasing oxidation temperature, an improvement I – V behaviour seen. reduction polysilicon surface roughness simultaneous field-enhanced leakage currents found. damage introduced charging shown.
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