Semiconductor light emitting element, electronic apparatus, and light emitting device

作者: Takehiko Okabe , Takashi Hodota

DOI:

关键词: Light emitting deviceConductorOptoelectronicsOpticsSemiconductorMaterials scienceLayer (electronics)

摘要: Disclosed is a semiconductor light emitting element (1) which includes: plurality of n-side columnar conductor sections (183), each provided by penetrating p-type layer (160) and (150), electrically connected to an n-type (140); layer-like section (184), disposed on the rear surface side face (150) when viewed from (183); p-side (173), (160); (174), (173). Thus, nonuniformity quantity outputted suppressed, reduction area in suppressed.

参考文章(12)
Hyun Kyung Kim, Dong Joon Kim, Flip-chip type nitride semiconductor light emitting diode ,(2005)
Moon Heon Kong, Jae-Hoon Lee, Hyung Ky Back, Yong-Chun Kim, Nitride semiconductor light-emitting element for flip chip ,(2004)
Takao Yamada, 隆志 市原, Takashi Ichihara, Hiroshi Yuasa, 佑馬 北台, Yuma Kitadai, 孝夫 山田, 拓 湯浅, Semiconductor light emitting element and light emitting device provided with the same ,(2007)
Chen Ou, Ching-San Tao, Mei-Lan Wu, Min-Hsun Hsieh, Tzu-Chieh Hsu, Mei-Chun Liu, Light-emitting apparatus ,(2006)
Kitatani Takeshi, Adachi Koichiro, Kasai Junichi, Nakahara Koji, SEMICONDUCTOR LIGHT EMITTING ELEMENT ,(2007)