Semiconductor light emitting device and method for fabricating the same

作者: Hiroaki Matsumura

DOI:

关键词:

摘要: A semiconductor light emitting device, which includes: a first conductivity-type layer; second portion having layer is disposed between the and side electrode connected to layer, wherein separated from an insulator film covering by separation area.

参考文章(14)
Chao-Chen Cheng, Feng-Hsu Fan, Chen-Fu Chu, Wen-Huang Liu, Jiunn-Yi Chu, Hao-Chun Cheng, Yuan-Hsiao Chang, Vertical led with current guiding structure ,(2008)
Dae Won Kim, Eu Jin Hwang, Jong Lam Lee, Yeo Jin Yoon, Jae Ho Lee, Light-emitting device and method of manufacturing the same ,(2009)
Sang Ho Yoon, Jong Gun Woo, In Tae Yeo, Doo Go Baik, Su Yeol Lee, Tae Sung Jang, Dong Woo Kim, Seok Beom Choi, Bang Won Oh, Vertical gallium nitride-based light emitting diode and method of manufacturing the same ,(2007)
Kazumi Kamada, Masahiko Sano, Masashi Yamamoto, Mitsuhiro Nonaka, Opposed terminal structure having a nitride semiconductor element ,(2005)
Takashi Kato, Tetsuji Matsuo, Hidekazu Aoyagi, Migration-proof light-emitting semiconductor device and method of fabrication ,(2005)
Katsumi Mori, Takayuki Kondo, Takeo Kaneko, Plane emission type semiconductor laser and method of manufacturing the same ,(1998)
Toshiya Kamimura, 俊也 上村, Iii nitride compound semiconductor light emitting element ,(1998)