Forming thin film vertical light emitting diodes

摘要: A thin film vertical light emitting diode (VLED) structure and process are described. Features of the design include following: bonding multiple smaller diameter LED wafers to a larger carrier wafer, which reduces per fabrication cost; using techniques metalize anode cathode respective annealing steps prior photolithography patterning structures; enabling by semi-permanent provide thermal chemical stability, while allowing bond release at an opportune time thermal, optical, or means; epitaxial substrate removal separate entire from its growth substrate; various devices can emit n-type side (cathode), p-type (anode), wall, combination surfaces mirror layers electrically conductive optically transmissive layers.