Etching solution for an aluminum oxide film, and method for manufacturing a thin-film semiconductor device using the etching solution

作者: Hirofumi Higashi , Yoshiharu Hidaka

DOI:

关键词: Nitric acidReactive-ion etchingEtching (microfabrication)Pulmonary surfactantThin filmPhosphoric acidSemiconductor deviceDry etchingInorganic chemistryMaterials science

摘要: An etching solution includes: phosphoric acid having concentration of 30% by weight to 80% weight; nitric 10% or less; and surfactant 0.0005% 0.0050% weight, wherein the is used for an aluminum oxide film density 2.80 g/cm 3 3.25 .