作者: Hirofumi Higashi , Yoshiharu Hidaka
DOI:
关键词: Nitric acid 、 Reactive-ion etching 、 Etching (microfabrication) 、 Pulmonary surfactant 、 Thin film 、 Phosphoric acid 、 Semiconductor device 、 Dry etching 、 Inorganic chemistry 、 Materials science
摘要: An etching solution includes: phosphoric acid having concentration of 30% by weight to 80% weight; nitric 10% or less; and surfactant 0.0005% 0.0050% weight, wherein the is used for an aluminum oxide film density 2.80 g/cm 3 3.25 .