Thin film transistor display panel and manufacturing method of the same

作者: Kyoung-Jae Chung , Seung-Ha Choi , Woo-Geun Lee

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摘要: A TFT display panel having a high charge mobility and making it possible to obtain uniform electric characteristics with respect large-area is provided as well manufacturing method thereof. includes gate electrode formed on an insulation substrate, first insulting layer of SiNx the electrode, second SiOx layer, oxide semiconductor overlap channel part, passivation contact hole exposing drain electrode. The has shape in which portion directly exposed together metal occupies area smaller than upper layer.

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