Driver circuit and semiconductor device
作者： Junichi Koezuka , Jun Koyama , Yuki Imoto , Tetsunori Maruyama , Yuji Asano
DOI:
关键词: Optoelectronics 、 Equivalent oxide thickness 、 Layer (electronics) 、 Electronic engineering 、 Materials science 、 Gate oxide 、 Barrier layer 、 Thin-film transistor 、 Oxide thin-film transistor 、 Semiconductor device 、 Silicon oxide
摘要: The silicon nitride layer 910 formed by plasma CVD using a gas containing hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on in direct contact with the oxide semiconductor 905 used for resistor 354, over 906 thin film transistor 355 909 serving barrier interposed therebetween. Therefore, higher concentration of introduced into than 906. As result, resistance 354 made lower that 355.
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