High-k metal gate devices with a dual work function and methods for making the same
作者： Liang-Gi Yao , Cheng-Tung Lin , Chen-Hua Yu
DOI:
关键词: Nanotechnology 、 Semiconductor device 、 Optoelectronics 、 Materials science 、 Dual (category theory) 、 High-κ dielectric 、 Work function 、 Dielectric layer 、 Layer (electronics)
摘要: A layer of P-metal material having a work function about 4.3 or 4.4 eV less is formed over high-k dielectric layer. Portions the N-metal are converted to materials by introducing additives such as O, C, N, Si others produce an increased 4.7 4.8 greater. TaC film may be TaCO, TaCN, TaCON using this technique. The including original portions and then patterned single patterning operation simultaneously form semiconductor devices from both unconverted sections sections.
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