Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal-oxide-semiconductor field effect transistor
作者： W. S. Kwan , M. J. Deen
DOI: 10.1116/1.581022
关键词: Stress (mechanics) 、 MOSFET 、 Noise measurement 、 Doping 、 Optoelectronics 、 Metal 、 Noise (electronics) 、 Field-effect transistor 、 Materials science 、 Scattering parameters
摘要: The latest evolution in complementary metal-oxide-semiconductor technology has made the field effect transistor (MOSFET) a viable choice for rf applications, especially frequencies low GHz region. However, hot-carrier effects should also be considered carefully when devices are operating regime. Here, we studied of dc stress on lightly doped drain (LDD) n-type MOSFET (NMOSFET) high-frequency performance by measuring and simulating its s parameters. This is first time, to authors’ best knowledge, that such experiments reported. We demonstrated clearly stressing LDD NMOSFETs giving representative s-parameter noise measurement results from 0.8 μm long device. showed can significantly degrade both parameters NMOSFETs, thus have considerable consequences circuit designers. Therefore, these when...
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