Microwave operation of submicrometer channel-length Silicon MOSFET's
作者： D.C. Shaver
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摘要: Aluminum-gate silicon n-channel MOSFET's with channel lengths down to 0.5 µm have been fabricated. A simple four-mask process based on contact optical lithography was used. Partial self-alignment of the gate could be achieved because an enhanced oxidation rate over source/drain due heavy arsenic implantation. Accordingly, parasitics were minimized and devices showed excellent microwave performance f_{\max} f T near 20 GHz.
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sci-hub.se 参考文章(2)
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