0.15-/spl mu/m RF CMOS technology compatible with logic CMOS for low-voltage operation
作者： M. Saito , M. Ono , R. Fujimoto , H. Tanimoto , N. Ito
DOI: 10.1109/16.661236
关键词:
摘要: … RF front-end IC’s for mobile telecommunications devices in the near future. In order for the RF CMOS … the same level at that of general high-performance silicon bipolar transistors, was …
harvard.edu
sci-hub.se 参考文章(18)
C. Wann, F. Assaderaghi, R. Dennard, Chenming Hu, G. Shahidi, Y. Taur, Channel profile optimization and device design for low-power high-performance dynamic-threshold MOSFET international electron devices meeting. pp. 113- 116 ,(1996) , 10.1109/IEDM.1996.553134
Y. Mii, S. Wind, Y. Taur, Y. Lii, D. Klaus, J. Bucchignano, An ultra-low power 0.1 μm CMOS Proceedings of 1994 VLSI Technology Symposium. pp. 9- 10 ,(1994) , 10.1109/VLSIT.1994.324403
T. Yoshitomi, T. Ohguro, M. Saito, M. Ono, E. Morifuji, H.S. Momose, H. Iwai, High performance 0.15 /spl mu/m single gate Co salicide CMOS symposium on vlsi technology. pp. 34- 35 ,(1996) , 10.1109/VLSIT.1996.507783
Oyamatsu, Kinugawa, Kakumu, Design Methodology Of Deep Submicron CMOS Devices For 1V Operation symposium on vlsi technology. pp. 89- 90 ,(1993) , 10.1109/VLSIT.1993.760259
D.C. Shaver, Microwave operation of submicrometer channel-length Silicon MOSFET's IEEE Electron Device Letters. ,vol. 6, pp. 36- 39 ,(1985) , 10.1109/EDL.1985.26034
C. Raynaud, J. Gautier, G. Guegan, M. Lerme, E. Playez, G. Dambrine, High-frequency performance of submicrometer channel-length silicon MOSFETs IEEE Electron Device Letters. ,vol. 12, pp. 667- 669 ,(1991) , 10.1109/55.116949
J. Chung, M. Jeng, J.E. Moon, A.T. Wu, T.Y. Chan, P.K. Ko, C. Hu, Deep-submicrometer MOS device fabrication using a photoresist-ashing technique IEEE Electron Device Letters. ,vol. 9, pp. 186- 188 ,(1988) , 10.1109/55.684
S. Mutoh, T. Douseki, Y. Matsuya, T. Aoki, S. Shigematsu, J. Yamada, 1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS IEEE Journal of Solid-state Circuits. ,vol. 30, pp. 847- 854 ,(1995) , 10.1109/4.400426
A.K. Agarwal, M.C. Driver, M.H. Hanes, H.M. Hobgood, P.G. McMullin, H.C. Nathanson, T.W. O'Keeffe, T.J. Smith, J.R. Szedon, R.N. Thomas, MICROX-an advanced silicon technology for microwave circuits up to X-band international electron devices meeting. pp. 687- 690 ,(1991) , 10.1109/IEDM.1991.235329
SA Rishton, YJ Mii, DP Kern, Y Taur, KY Lee, T Lii, K Jenkins, D Quinlan, T Brown Jr, D Danner, F Sewell, M Polcari, High performance sub-0.1 μm silicon n-metal–oxide–semiconductor transistors with composite metal/polysilicon gates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 11, pp. 2612- 2614 ,(1993) , 10.1116/1.586635