Ion implanted Si MESFET's with high cutoff frequency
作者： G. Fernholz , H. Beneking
关键词:
摘要: A new technology of ion-implanted silicon MESFET's on high-resistivity substrates has been developed to reduce substrate effects. Consequently, the devices show an improved static behavior concerning pinchoff and drain feedback. Static dynamic performance will be presented, latter showing f_{max}=14 GHz calculated from scattering parameter measurements a large signal switching time 60 ps. The transit frequency intrinsic device is f_{T} \sim 3.9 GHz.
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