Room Temperature Ferromagnetism: Nonmagnetic Semiconductor Oxides and Nonmagnetic Dopants

摘要: Advances in room temperature ferromagnetic semiconductors increase the opportunity to commercialize full spintronic devices. The manipulation of electron spin semiconductor materials has driven significant research activity with goal realizing their amazing technological potential. Coupling magnetic and semiconducting properties could lead a new generation information communication devices. During past 20 years, intensive on led discovery two interesting facts. Room ferromagnetism is observed undoped oxides empty or completely filled d- f-orbitals, nonmagnetic dopants can induce enhance materials. organized review which addresses this phenomenon covers large number studies subject rare. In study, we firstly advantages aspects devices as well suitable for these applications. Here, tried provide systematic study defects induced by impact ferromagnetism. We hope assist researchers creating complete picture develop future activities access innovative