作者: Hoon-Young Kim , Won-Suk Choi , Suk-Young Ji , Young-Gwan Shin , Jin-Woo Jeon
DOI: 10.1007/S00339-018-1553-1
关键词: Pulse duration 、 Indium tin oxide 、 Thin film 、 Femtosecond 、 Gaussian beam 、 Optics 、 Laser 、 Beam (structure) 、 Materials science 、 Optical microscope
摘要: This study compares the ablation morphologies obtained with a femtosecond laser of both Gaussian and quasi-flat top beam profiles when applied to indium tin oxide (ITO) thin films for purpose OLED repair. A system wavelength 1030 nm pulse duration 190 fs is used pattern an ITO film. The fluence optimized patterning at 1.38 J/cm2. patterned film then evaluated through optical microscope atomic force microscope. Ablations square are demonstrated using slits varying x–y axes. With beam, width ablated area shown range from 9.17 9.99 μm number irradiation increases one six. In contrast, slit control obtain remains constant 10 μm, despite increase in pulse. improved surface roughness correlated measured Ra values. Furthermore, minimum resolution controllable depth on found be 60 nm. used, decreases 40