Effect of annealing on optical properties of InAs quantum dots grown by MOCVD on GaAs (100) vicinal substrates
作者： Liang Song , Zhu Hong-Liang , Pan Jiao-Qing , Zhao Ling-Juan , Wang Wei
DOI: 10.1088/0256-307X/22/10/065
关键词: Materials science 、 Laser linewidth 、 Optoelectronics 、 Annealing (metallurgy) 、 Blueshift 、 Wavelength 、 Metalorganic vapour phase epitaxy 、 Quantum dot 、 Epitaxy 、 Condensed matter physics 、 Vicinal
摘要: Thermal annealing effect on InAs quantum dots grown vicinal (100) GaAs substrates is studied in comparison with exact substrates. We find that acts stronger by greatly accelerating the degradation of material quality. as well slightly increasing blueshift emission wavelength and narrowing PL linewidth. It attributed to higher strain formed
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