Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots

作者: G. Saint-Girons , G. Patriarche , A. Mereuta , I. Sagnes

DOI: 10.1063/1.1448887

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摘要: The formation process of a bimodal distribution low-pressure metal-organic-vapor-phase-epitaxy (LP–MOVPE) grown InGaAs/GaAs quantum dots (QDs) is studied by transmission electronic microscopy. We demonstrate that in our growth conditions, the deposition an InGaAs layer on already existing array InAs formed QDs leads to nucleation second population. diffusion limited, inducing low density due high In-atoms length typical MOVPE. On contrary, enhanced roughness highly strained wetting QDs, leading higher density. study photoluminescence spectra shows only occurs when deposited thickness exceeds about 1.4 monolayers, i.e., after QDs.

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