Dominant defect levels in diamond thin films: A photocurrent and electron paramagnetic resonance study
作者： Milos Nesládek , LM Stals , A Stesmans , K Iakoubovskij , GJ Adriaenssens
DOI: 10.1063/1.121632
关键词: Thin film 、 Photocurrent 、 Material properties of diamond 、 Chemical vapor deposition 、 Analytical chemistry 、 Electron paramagnetic resonance 、 Materials science 、 Hydrogen 、 Diamond 、 Resonance
摘要: Characteristic features in photocurrent (PC) and electron paramagnetic resonance (EPR) spectra are discussed attributed to main defects the gap of optical-quality chemical vapor deposited diamond. A shoulder PC with an onset at about 2.2 eV is single-substitutional nitrogen defect (EPR P1 g=2.0024). second feature 1.3 observed on “as-grown” samples a hydrogen terminated surface. The level associated this related, disappears after oxidation diamond sample EPR g=2.0028, which was also suggested be H-related, discussed.
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