Mn induced ferromagnetism and modulated topological surface states in Bi2Te3
作者： Chengwang Niu , Ying Dai , Meng Guo , Wei Wei , Yandong Ma
DOI: 10.1063/1.3601020
关键词: Magnetic moment 、 Magnetoelectric effect 、 Topological insulator 、 Topological order 、 Ferromagnetism 、 Magnetization 、 Condensed matter physics 、 Spintronics 、 Surface states 、 Materials science 、 Topology
摘要: The ferromagnetism and topological surface states manipulated by manganese in insulator Bi2Te3 are investigated means of first-principles calculations. Our results indicate that substitution Mn for Bi can induce spin-polarized hole with a total magnetic moments 4.0 μB, sufficient carrier density is required to obtain sustained magnetization. obvious gap at the Dirac point coinciding sharp state appears as doped into because interactions break time reversal symmetry. study paves way explore magnetoelectric effect spintronic device applications.
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