Raman spectroscopy of the internal strain of a graphene layer grown on copper tuned by chemical vapor deposition
作者： V. Yu , E. Whiteway , J. Maassen , M. Hilke
DOI: 10.1103/PHYSREVB.84.205407
关键词: Chemical engineering 、 Copper 、 Graphene oxide paper 、 Chemical vapor deposition 、 Raman spectroscopy 、 Graphene nanoribbons 、 Graphene 、 Strain (chemistry) 、 Materials science 、 Layer (electronics)
摘要: Strain can be used as an alternate way to tune the electronic properties of graphene. Here we demonstrate that it is possible uniform strain graphene simply by changing chemical vapor deposition growth temperature on copper. Due cooling copper system, induce a compressive The analyzed Raman spectroscopy, where shift in 2D peak observed and compared our ab initio calculations system function strain.
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