Graphene Based Physical and Chemical Sensors

摘要: New nanostructured Schottky junctions based on graphene/platinum grown different substrates are fabricated and investigated for sensing applications. The integration of graphene layer (s) regular M-S was only possible by using an ALD-grown platinum thin film (~40 nm) then growing in PECVD at temperatures lower than silicide formation temperature (i.e., <700 °C). electrochemical radiation behaviors were two substrate types. first is a moderately-doped n-type (e− conc. ≈ 2 × 1015 cm−3) silicon which rectifier response with threshold voltages observed. An order magnitude increase generated current observed the use high-resistivity (ρ ≥ 10,000 Ωcm). By adding dielectric to form graphene-metal-insulator-semiconductor junction (Graphene–MIS) linear ohmic obtained responses explained studying band diagrams processes aid XPS Raman analyses that clearly indicated p-doping γ-ray radiations, resulted strong reversed tunneled through ultrathin layer. In case substrates, much stronger due weak forward from substrate, reverse and, ultimately, higher sensitivity. uniqueness research process junction. Exfoliated results increased contact resistance low e− mobility, will not yield desired effects.