Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO
作者： A. Lajn , H. v. Wenckstern , Z. Zhang , C. Czekalla , G. Biehne
DOI: 10.1116/1.3086718
关键词: Analytical chemistry 、 Palladium 、 Sputter deposition 、 Schottky diode 、 Wide-bandgap semiconductor 、 Sputtering 、 X-ray photoelectron spectroscopy 、 Materials science 、 Photoconductivity 、 Photocurrent
摘要: Highly rectifying Ag, Au, Pd, and Pt Schottky contacts have been fabricated on heteroepitaxial pulsed-laser deposited ZnO-thin films by reactive sputtering. X-ray photoelectron spectroscopy revealed an oxidation of the contact material; gold are purely metallic. The necessity a conductive capping oxidized is proven photocurrent measurements AgxO contacts. ideality factors effective barrier heights were determined current-voltage measurements. Capacitance-voltage temperature dependent furthermore carried out to determine mean height, standard deviation respective voltage dependencies taking lateral fluctuations height into account.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(15)
Holger von Wenckstern, Gisela Biehne, R. Abdel Rahman, Holger Hochmuth, Michael Lorenz, Marius Grundmann, Mean barrier height of Pd Schottky contacts on ZnO thin films Applied Physics Letters. ,vol. 88, pp. 092102- ,(2006) , 10.1063/1.2180445
Th Pillo, R Zimmermann, P Steiner, S Hüfner, The electronic structure of PdO found by photoemission (UPS and XPS) and inverse photoemission (BIS) Journal of Physics: Condensed Matter. ,vol. 9, pp. 3987- 3999 ,(1997) , 10.1088/0953-8984/9/19/018
R. Schifano, E. V. Monakhov, U. Grossner, B. G. Svensson, Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO Applied Physics Letters. ,vol. 91, pp. 193507- ,(2007) , 10.1063/1.2806194
Sang-Ho Kim, Han-Ki Kim, Tae-Yeon Seong, Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n-type ZnO Applied Physics Letters. ,vol. 86, pp. 112101- ,(2005) , 10.1063/1.1862772
H. Frenzel, A. Lajn, M. Brandt, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, ZnO metal-semiconductor field-effect transistors with Ag-Schottky gates Applied Physics Letters. ,vol. 92, pp. 192108- ,(2008) , 10.1063/1.2926684
B. J. Coppa, C. C. Fulton, S. M. Kiesel, R. F. Davis, C. Pandarinath, J. E. Burnette, R. J. Nemanich, D. J. Smith, Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces Journal of Applied Physics. ,vol. 97, pp. 103517- ,(2005) , 10.1063/1.1898436
R. C. Neville, C. A. Mead, Surface Barriers on Zinc Oxide Journal of Applied Physics. ,vol. 41, pp. 3795- 3800 ,(1970) , 10.1063/1.1659509
M. W. Allen, S. M. Durbin, J. B. Metson, Silver oxide Schottky contacts on n-type ZnO Applied Physics Letters. ,vol. 91, pp. 053512- ,(2007) , 10.1063/1.2768028
Tery L. Barr, An ESCA study of the termination of the passivation of elemental metals The Journal of Physical Chemistry. ,vol. 82, pp. 1801- 1810 ,(1978) , 10.1021/J100505A006
John. F. Wager, Applied physics. Transparent electronics. Science. ,vol. 300, pp. 1245- 1246 ,(2003) , 10.1126/SCIENCE.1085276