Impact of strain on electronic defects in (Mg,Zn)O thin films
作者： Florian Schmidt , Stefan Müller , Holger von Wenckstern , Gabriele Benndorf , Rainer Pickenhain
DOI: 10.1063/1.4894841
关键词:
摘要: We have investigated the impact of strain on incorporation and properties extended point defects in (Mg,Zn)O thin films by means photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), optical spectroscopy. The recombination line Y2, previously detected ZnO grown an Al-doped buffer layer attributed to tensile strain, was exclusively found samples being under is absent relaxed or compressively strained films. Furthermore a structural defect E3′ can be via DLTS measurements only incorporated samples. Finally it shown that omnipresent E3 optically recharged
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