作者: Xu Wang , Zhengwei Chen , Congyu Hu , Katsuhiko Saito , Tooru Tanaka
DOI: 10.1016/J.JCRYSGRO.2017.11.017
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摘要: Abstract MgZnO films and ZnO/Mg0.19Zn0.81O single quantum well (QW) structures with layer thickness from 1 to 4 nm were directly prepared on sapphire substrates at the low substrate temperature of 400 °C by pulsed laser deposition (PLD). The photoluminescence (PL) peak QW shifted 3.51 3.33 eV room as was increased 2 4 nm. PL position 2 nm can be explained Varshni’s relation best fitting data E(0) = 3.558 eV, α = 2.17 × 10−4 eV/K, β = 589 K. No S-shape variation for this indicates low-temperature growth is an ideal candidate eliminating stain effect in ZnO QW.