Gettering in Silicon

作者: S. A. McHugo , H. Hieslmair

DOI: 10.1002/047134608X.W3209

关键词: Condensed matter physicsRelaxation (physics)SiliconSolubilityGetterMaterials science

摘要: The sections in this article are 1 A Brief Overview of Gettering 2 Definition Solubility 3 Relaxation Gettering 4 Segregation Gettering 5 Gettering by Implantation 6 Gettering Simulations

参考文章(174)
K. Mahfoud, M. Loghmarti, J.C. Muller, P. Siffert, Influence of carbon and oxygen on phosphorus and aluminium co-gettering in silicon solar cells Materials Science and Engineering: B. ,vol. 36, pp. 63- 67 ,(1996) , 10.1016/0921-5107(95)01284-2
Morimasa Miyazaki, Masakazu Sano, Shinsuke Sadamitsu, Shigeo Sumita, Nobukatsu Fujino, Toshio Shiraiwa, Dependence of Gettering Efficiency on Metal Impurities Japanese Journal of Applied Physics. ,vol. 28, ,(1989) , 10.1143/JJAP.28.L519
R. L. Meek, T. E. Seidel, A. G. Cullis, Diffusion Gettering of Au and Cu in Silicon Journal of The Electrochemical Society. ,vol. 122, pp. 786- 796 ,(1975) , 10.1149/1.2134324
Renshi Sawada, Durability of Mechanical Damage Gettering Effect in Si Wafers Japanese Journal of Applied Physics. ,vol. 23, pp. 959- 964 ,(1984) , 10.1143/JJAP.23.959
Xiang Lu, S. Sundar Kumar Iyer, Chenming Hu, Nathan W. Cheung, Jing Min, Zhineng Fan, Paul K. Chu, Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation Applied Physics Letters. ,vol. 71, pp. 2767- 2769 ,(1997) , 10.1063/1.120127
Scott A. McHugo, E. R. Weber, S. M. Myers, G. A. Petersen, Gettering of Iron to Implantation Induced Cavities and Oxygen Precipitates in Silicon Journal of The Electrochemical Society. ,vol. 145, pp. 1400- 1405 ,(1998) , 10.1149/1.1838472
Donald P. Miller, James E. Moore, C. R. Moore, Boron Induced Dislocations in Silicon Journal of Applied Physics. ,vol. 33, pp. 2648- 2652 ,(1962) , 10.1063/1.1729037
Frank S. Ham, Theory of diffusion-limited precipitation Journal of Physics and Chemistry of Solids. ,vol. 6, pp. 335- 351 ,(1958) , 10.1016/0022-3697(58)90053-2
L. Jastrzebski, R. Soydan, J. McGinn, R. Kleppinger, M. Blumenfeld, G. Gillespie, N. Armour, B. Goldsmith, W. Henry, S. Vecrumba, A Comparison of Internal Gettering during Bipolar, CMOS, and CCD (High, Medium, Low Temperature) Processes Journal of The Electrochemical Society. ,vol. 134, pp. 1018- 1025 ,(1987) , 10.1149/1.2100559