Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation
作者： Xiang Lu , S. Sundar Kumar Iyer , Chenming Hu , Nathan W. Cheung , Jing Min
DOI: 10.1063/1.120127
关键词:
摘要: We report the implementation of ion-cut silicon-on-insulator (SOI) wafer fabrication technique with plasma immersion ion implantation (PIII). The hydrogen rate, which is independent size, considerably higher than that conventional implantation. simple PIII reactor setup and its compatibility cluster-tools offer other process optimization opportunities. feasibility demonstrated by successful SOI structures. can be optimized so only one species dominant. performing using helium also demonstrated.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(9)
Jean-Pierre Colinge, Silicon-on-Insulator Technology: Materials to VLSI ,(1991)
Xiang Lu, Nathan W. Cheung, Michael D. Strathman, Paul K. Chu, Brian Doyle, Hydrogen induced silicon surface layer cleavage Applied Physics Letters. ,vol. 71, pp. 1804- 1806 ,(1997) , 10.1063/1.119404
Nathan W. Cheung, Plasma immersion ion implantation for ULSI processing Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 55, pp. 811- 820 ,(1991) , 10.1016/0168-583X(91)96285-S
Xiang Lu, S. Sundar Kumar Iyer, Jingbao Liu, Chenming Hu, Nathan W. Cheung, Jing Min, Paul K. Chu, Separation of plasma implantation of oxygen to form silicon on insulator Applied Physics Letters. ,vol. 70, pp. 1748- 1750 ,(1997) , 10.1063/1.118645
N.W. Cheung, Plasma immersion ion implantation for semiconductor processing Materials Chemistry and Physics. ,vol. 46, pp. 132- 139 ,(1996) , 10.1016/S0254-0584(97)80006-5
Paul K. Chu, Shu Qin, Chung Chan, Nathan W. Cheung, Lawrence A. Larson, Plasma immersion ion implantation—a fledgling technique for semiconductor processing Materials Science & Engineering R-reports. ,vol. 17, pp. 207- 280 ,(1996) , 10.1016/S0927-796X(96)00194-5
B. Aspar, M. Bruel, M. Zussy, A.M. Cartier, TRANSFER OF STRUCTURED AND PATTERNED THIN SILICON FILMS USING THE SMART-CUT PROCESS Electronics Letters. ,vol. 32, pp. 1985- 1986 ,(1996) , 10.1049/EL:19961305
Michel Bruel, Application of hydrogen ion beams to Silicon On Insulator material technology Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 108, pp. 313- 319 ,(1996) , 10.1016/0168-583X(95)01056-4
Q.-Y. Tong, K. Gutjahr, S. Hopfe, U. Gösele, T.-H. Lee, Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates Applied Physics Letters. ,vol. 70, pp. 1390- 1392 ,(1997) , 10.1063/1.118586