Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal Process
作者： Junghyo Nah , En-Shao Liu , Kamran M. Varahramyan , Dave Dillen , Steve McCoy
关键词: Nanotechnology 、 Dopant 、 Nanowire 、 Dopant Activation 、 Materials science 、 Field-effect transistor 、 Germanium 、 Optoelectronics 、 Rapid thermal processing 、 Tunnel junction 、 Subthreshold conduction
摘要: We report the enhanced performance of Ge nanowire (NW) tunneling field-effect transistors (TFETs), realized using a millisecond flash-assisted rapid thermal process (fRTP) for dopant activation. The electrical characteristics our fRTP-activated NW TFETs exhibit maximum drive currents up toImax ~ 28 μA/μm at Vdd = -3 V and improved subthreshold swings. By comparison, conventional RTP activation show an order magnitude lower current. attribute these findings to more abrupt doping profile tunnel junction, owing reduced diffusion
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