Experimental Investigation of the Tunneling Injection Boosters for Enhanced $I_{ON}$ ETSOI Tunnel FET
作者： Anthony Villalon , Cyrille Le Royer , Mikael Casse , David Cooper , Jean-Michel Hartmann
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摘要: We compare the performance of planar fully depleted silicon-on-insulator tunnel FETs (TFETs) with different tunneling boosters. The effectiveness each following boosters is studied independently: low-bandgap channel or source-drain material as well abrupt junction and ultrathin body. These lead to an increase in rate, thus enhanced ON current. ION values our devices vastly outperform literature results, paving way for future CMOS-like TFET circuits.
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