Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations
作者： C. Navarro , S. Barraud , S. Martinie , J. Lacord , M.-A. Jaud
DOI: 10.1016/J.SSE.2016.10.027
关键词:
摘要: … This configuration allows to in-situ switch from N to P-like FETs by selecting which carrier is injected by tunneling. The RFET main advantages are: (i) no doping required for S/D regions …
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