High temperature operation of an integrated erbium-doped DBR laser on an ultra-low-loss Si 3 N 4 platform

作者: Michael Belt , Daniel J. Blumenthal

DOI: 10.1364/OFC.2015.TU2C.7

关键词: Tunable laserDopingWaveguide (optics)Materials scienceOptoelectronicsOpticsDistributed Bragg reflectorAtmospheric temperature rangeLaserQuantum dot laserErbium

摘要: We demonstrate record high temperature operation, 400 °C, of an integrated Al 2 O 3 :Er3+ DBR laser on ultra-low-loss Si N 4 waveguide platform. Additionally, the device exhibits uncompensated dependent wavelength shift 1.92 GHz/°C and maintains over 1.5 mW output power throughout entire range.

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