Room temperature lasing from InGaAs quantum dots
作者： R. Mirin , A. Gossard , J. Bowers
DOI: 10.1049/EL:19961147
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摘要: Alternating molecular beam epitaxy is used to form InGaAs quantum dots by utilising the two-dimensional three-dimensional Stranski-Krastanow growth transition. The are embedded in a separate confinement heterostructure laser diodes. Lasing observed from excited states room temperature down 80 K. Pronounced state-filling dot lasers at temperature. As decreased, becomes less pronounced, which compensates for bandgap increase and leads whose lasing wavelength very weakly dependent on
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