Method for fabricating semiconductor device and device using same
作者： Ho-Young Kim , Bo-Un Yoon , Il-young Yoon , Bo-Kyeong Kang , Jae-Seok Kim
DOI:
关键词: Materials science 、 Substrate (printing) 、 Buffer (optical fiber) 、 Oxide 、 Optoelectronics 、 Integrally closed 、 Base (geometry) 、 Semiconductor device 、 Electrical engineering 、 Fin (extended surface)
摘要: In a method for fabricating semiconductor device, substrate may be provided that includes: base, an active fin projects from upper surface of the base and is integrally formed with buffer oxide film pattern on in contact fin. A first dummy gate to cover smoothed expose pattern. second exposed film.
lens.org 参考文章(14)
Michael A. Guillorn, Josephine B. Chang, Chung-Hsun Lin, Fin Fet device with independent control gate ,(2011)
Hyunseok Lim, Hauk Han, Myoungbum Lee, Tai-Soo Lim, Jeonggil Lee, Kihyun Yun, Semiconductor devices and methods for fabricating the same ,(2015)
In-Soo Jung, Byeong-Chan Lee, Yong-Hoon Son, Deok-Hyung Lee, Si-Young Choi, Methods for fabricating fin field effect transistors using a protective layer to reduce etching damage ,(2004)
Dong-uk Choi, Dong-gun Park, Chang-Woo Oh, Dong-won Kim, Kyoung-hwan Yeo, Field effect transistor and method for manufacturing the same ,(2005)
Uday Shah, Willy Rachmady, Jack T. Kavalieros, Multi-gate device having a T-shaped gate structure ,(2008)
Keizo Kawakita, Semiconductor device and manfacturing method of the same ,(2007)
Lee Jong Wook, Lee Deok Hyung, Shin Yu Gyun, Kang Min Gu, SEMICONDUCTOR DEVICES HAVING A FIN TRANSISTOR AND A PLANNAR TRANSISTOR AND METHODS OF FORMING THE SAME ,(2006)
Aizawa Takuya, Sato Masakazu, Nakao Satoru, Abe Hiroshi, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR ,(2007)
Satoshi Inaba, Akio Kaneko, Junji Yagishita, 淳 史 八木下, Semiconductor device, and method of manufacturing same ,(2006)