Semiconductor devices and methods for fabricating the same
作者： Hyunseok Lim , Hauk Han , Myoungbum Lee , Tai-Soo Lim , Jeonggil Lee
DOI:
关键词:
摘要: A semiconductor device includes a substrate including first region and second each having an n-type p-type region, wherein the in silicon channel, germanium respectively include channel. gate insulating pattern formed of thermal oxide layer is disposed on regions region.
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