Microwave plasma in situ generation of nitride reagents

摘要: The in situ generation of hydrazine, the most vigorous reagent for deposition thin film nitride materials, is accomplished using a method that compatible with synthesis high-purity electronic and photonic materials. In hydrazine enhances its utilization as vapor catalyzing nucleation nanoparticles low-temperature CVD growth films nanowires. Mass spectrometry confirms production an ammonia-active nitrogen downstream 2450 MHz microwave discharge. materials chemistry, associated this process detailed stream containing mixtures all known nitriding reagents including hydrazine.