作者: Maoqi He , S. Noor Mohammad
DOI: 10.1116/1.2740275
关键词: Scanning electron microscope 、 Vapor–liquid–solid method 、 Nanotechnology 、 Dissociation (chemistry) 、 Wide-bandgap semiconductor 、 Diffraction 、 Wurtzite crystal structure 、 X-ray crystallography 、 Materials science 、 Nanowire
摘要: Various novel features have been discussed of the self-catalytic nanowire growth technique with application to InN growths. It is hard grow nanowires due very low dissociation temperature (500–600°C) and rate NH3 at this temperature. However, scanning electron microscopy images show that efficiently produced long, uniform, single-crystal nanowires. Unlike most other methods, also versatile enough produce a wide variety standing lying on substrates. useful by conventional vapor-liquid-solid formalism. Energy-dispersive spectroscopy showed composition InN. X-ray diffraction patterns indicated these had pure hexagonal wurtzite structure.