Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.
作者： L. Khomenkova , D. Lehninger , O. Kondratenko , S. Ponomaryov , O. Gudymenko
DOI: 10.1186/S11671-017-1960-9
关键词: Sputter deposition 、 Crystallite 、 Amorphous solid 、 Nucleation 、 Nanoclusters 、 Ellipsometry 、 Analytical chemistry 、 Materials science 、 Auger electron spectroscopy 、 Crystallization
摘要: Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and targets in Ar plasma, were studied multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared X-ray diffraction for varied deposition conditions annealing treatments. It was found that as-deposited films are homogeneous all contents, thermal treatment stimulated a phase separation formation crystalline ZrO2. The “start point” this process is the range 640–700 °C depending on content. higher content, lower temperature necessary separation, nucleation nanoclusters, crystallization. Along with this, crystallization tetragonal exceeds phase, which results crystallites an amorphous matrix. mechanism discussed detail.
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