Enhanced conductivity of solution-processed indium tin oxide nanoparticle films by oxygen partial pressure controlled annealing

摘要: A highly conductive and transparent indium tin oxide (ITO) film was developed using a nanoparticle-based solution process through the control of oxygen partial pressure during annealing. At an 2.1 × 10−3 Torr, maximum conductivity 313 Ω−1 cm−1 obtained: great improvement over conventional ITO nanoparticle films (at this conductivity, sheet resistance decreased to 30 Ω sq−1, transmittance reached 90%). By analyzing electron concentration mobility Hall measurements, we determined that main factor contributing enhanced is increase in occurs due formation vacancies under low pressures. However, if too low, removal organic ligands covering nanoparticles incomplete, reduced. Microstructure also necessary for further mobility.