The influence of sputtering power and O2/Ar flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination
作者： Hyun-Suk Kim , Kyung-Bae Park , Kyoung Seok Son , Joon Seok Park , Wan-Joo Maeng
DOI: 10.1063/1.3488823
关键词: Analytical chemistry 、 Deposition (law) 、 Amorphous solid 、 Photoelectric effect 、 Thin-film transistor 、 Sputtering 、 Stress (mechanics) 、 Visible spectrum 、 Power (physics) 、 Materials science
摘要: The performance and stability of amorphous HfInZnO thin film transistors under visible light illumination were studied. extent device degradation upon negative bias stress with the presence is found to be strongly sensitive photoelectric effect in oxide semiconductor. Highly stable devices fabricated by optimizing deposition conditions films, where combination high sputtering power O2/Ar gas flow ratio was result highest experiments.
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