The electrical conduction properties of poly-crystalline indium-zinc-oxide film
作者： S. Tomai , K. Terai , T. Junke , Y. Tsuruma , K. Ebata
DOI: 10.1063/1.4865504
关键词:
摘要: We have developed a high-mobility and high-uniform oxide semiconductor using poly-crystalline material composed of indium zinc (p-IZO). A typical conduction mechanism p-IZO film was demonstrated by the grain boundary scattering model as in polycrystalline silicon. The potential 2-h-annealed IZO calculated to be 100 meV, which comparable that However, thin transistor (TFT) measurement shows rather uniform characteristics. It denotes mobility deterioration around boundaries is lower than case for low-temperature This assertion made based on difference between amorphous being much smaller silicon transistors. Therefore, we conclude promising TFT channel, realizes high drift uniformity simultaneously.
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