Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices
作者： Toshio Kamiya , Zahid A. K. Durrani , Haroon Ahmed , Toshiyuki Sameshima , Yoshikazu Furuta
DOI: 10.1116/1.1570849
关键词:
摘要: The effects of hot H2O-vapor annealing were investigated on local carrier transport properties over a few grain boundaries in polycrystalline silicon. It shows that effectively reduces grain-boundary dangling bonds and the potential barrier height. In addition, it narrows distribution height value significantly. These are thought to originate from oxidation vicinity film surface, hydrogenation deeper region. Our results suggest H2O can improve by opening up shorter percolation paths increasing effective mobility density.
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