Effect of ZnS and PbS shell on mem-behavior of CdS quantum dots

作者: Pranayee Datta , Hirendra Das , Qiang Xu

DOI: 10.1007/S10854-021-05415-6

关键词: Auxiliary electrodeMaterials scienceOptoelectronicsNanoparticleCoulomb blockadeTransmission electron microscopyCrystalliteActive layerQuantum dotIndium

摘要: In this paper, a systematic study is carried out on mem-behavior of CdS, CdS@ZnS, and CdS@PbS core–shell nanocomposites with emphasis the effect ZnS PbS shell CdS quantum dots. From X-ray diffraction, dots are found to be hexagonal in nature average crystallite size ~ 10.3 nm. high-resolution transmission electron microscope images, particle size calculated around 3–4 nm for For nanoparticles, formation epitaxial layer core clearly evident enhancement sizes. Active as-synthesized samples deposited Indium tin oxide-coated glass which used as one electrode. Aluminium counter electrode over active using thermal evaporation technique. The fabricated devices show bipolar switching characteristics prominent hysteresis loops. current–voltage memristive, memcapacitive, meminductive behavior depending type used. It also observed that inclusion $$\mathrm{PbS}$$ significantly alters major finding study. conduction through device due coulomb blockade supports ON/OFF mechanism. sensitivity can determined from RON/ROFF ratio, it higher CdS@ZnS nanoparticles compared nanoparticles.

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