Miniaturized waveguide-integrated p-i-n photodetector with 120-GHz bandwidth and high responsivity
作者： A. Beling , H.-G. Bach , G.G. Mekonnen , R. Kunkel , D. Schmidt
关键词: Optoelectronics 、 Photodetector 、 Responsivity 、 Bandwidth (signal processing) 、 Wavelength 、 Photodiode 、 Quantum efficiency 、 Waveguide (optics) 、 Optics 、 Diffusion capacitance 、 Materials science
摘要: A low-capacitance waveguide-integrated photodiode on InP with a minimized absorber length is presented. In order to maintain high quantum efficiency, an optical matching layer exploiting mode beating effects employed. Its optimization leads twofold enhanced external responsivity of 0.5 A/W at 1.55-/spl mu/m wavelength in accordance simulation. The reduced p-n junction capacitance enables 3-dB bandwidths up 120 GHz mainly limited due carrier transit time effects.
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